A Focused Ion Beam (FIB) is a versatile and powerful technique in materials science and nanotechnology for precision imaging, milling, and deposition at the nanoscale. It utilizes a focused beam of ions, typically gallium ions, accelerated to high energies. The focused beam can be precisely scanned over a sample’s surface, enabling imaging and manipulation with exceptional spatial resolution. FIB systems find applications in semiconductor device editing, specimen preparation for transmission electron microscopy (TEM), and three-dimensional nanofabrication. The ability to selectively remove or deposit material at the nanoscale makes FIB a valuable tool for researchers and engineers working on microelectronics, materials characterization, and advanced nanofabrication processes.
