“Doping” involves intentionally introducing impurities into a semiconductor material to alter its electrical properties. By adding controlled amounts of specific elements (dopants) into the crystal lattice of semiconductors, such as silicon, the material’s electrical conductivity can be modified. Dopants can either increase (n-type doping) or decrease (p-type doping) the number of charge carriers, like electrons or holes, within the semiconductor. This deliberate modification of conductivity allows the creation of semiconductor devices like transistors and diodes, forming the basis of modern electronics. Doping is a fundamental process in semiconductor manufacturing, enabling the precise tailoring of electronic properties necessary for designing and producing high-performance integrated circuits and electronic devices.